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| IPP10N03L IPB10N03L OptiMOS(R) Buck converter series Feature * N-Channel Product Summary VDS RDS(on) max. SMD version ID P- TO263 -3-2 30 8.9 73 P- TO220 -3-1 V m A * Logic Level * Low On-Resistance RDS(on) * Excellent Gate Charge x RDS(on) product (FOM) * Superior thermal resistance * 175C operating temperature * Avalanche rated * dv/dt rated * Ideal for fast switching buck converters Type IPP10N03L IPB10N03L Package Ordering Code Marking 10N03L 10N03L P- TO220 -3-1 Q67042-S4040 P- TO263 -3-2 Q67040-S4346 Maximum Ratings, at Tj = 25 C, unless otherwise specified Parameter Symbol Continuous drain current1) TC=25C Value 73 63 Unit A ID Pulsed drain current TC=25C I D puls EAS EAR dv/dt VGS Ptot T j , Tstg 292 25 10 6 20 107 -55... +175 55/175/56 kV/s V W C mJ Avalanche energy, single pulse ID=30A, VDD=25V, RGS=25 Repetitive avalanche energy, limited by Tjmax2) Reverse diode dv/dt IS=73A, VDS=24, di/dt=200A/s, Tjmax=175C Gate source voltage Power dissipation TC=25C Operating and storage temperature IEC climatic category; DIN IEC 68-1 Page 1 2003-01-17 IPP10N03L IPB10N03L Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 3) Symbol min. RthJC RthJA - Values typ. 0.9 max. 1.4 62 40 Unit K/W Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Static Characteristics Drain-source breakdown voltage V GS=0V, I D=1mA Symbol min. V(BR)DSS VGS(th) I DSS I GSS RDS(on) RDS(on) 30 1.2 Values typ. 1.6 max. 2 Unit V Gate threshold voltage, VGS = VDS ID=60A Zero gate voltage drain current V DS=30V, V GS=0V, Tj=25C V DS=30V, V GS=0V, Tj=175C A 0.01 10 1 1 100 100 nA m 9.9 9.5 6.8 6.5 13.4 13.1 9.2 8.9 Gate-source leakage current V GS=20V, VDS=0V Drain-source on-state resistance V GS=4.5V, ID=36A V GS=4.5V, ID=36A, SMD version Drain-source on-state resistance4) V GS=10V, ID=36A V GS=10V, ID=36A, SMD version 1Current limited by bondwire ; with an R thJC = 1.4K/W the chip is able to carry I D= 88A at 25C, for detailed information see app.-note ANPS071E available at www.infineon.com/optimos 2Defined by design. Not subject to production test. 3Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical without blown air. 4Diagrams are related to straight lead versions Page 2 2003-01-17 IPP10N03L IPB10N03L Electrical Characteristics Parameter Dynamic Characteristics Transconductance Input capacitance Output capacitance Reverse transfer capacitance Gate resistance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Output charge Gate plateau voltage Reverse Diode Inverse diode continuous forward current Inv. diode direct current, pulsed Inverse diode forward voltage Reverse recovery time Reverse recovery charge ISM VSD trr Qrr VGS =0V, I F=73A VR =15V, IF=lS, diF /dt=100A/s Symbol Conditions min. Values typ. 63 1290 500 130 1.4 7.7 20 31.5 19 max. - Unit g fs Ciss Coss Crss RG t d(on) tr t d(off) tf V DS2*I D*RDS(on)max, ID=63A V GS=0V, V DS=25V, f=1MHz 32 - S 1710 pF 670 190 30 47.3 28.5 11.6 ns V DD=15V, VGS=10V, ID=18A, RG=4.7 Q gs Q gd Qg Q oss V DD=15V, ID=36A - 4 10.6 19 18.2 3.6 5 13.3 23.8 22.8 - nC V DD=15V, ID=36A, V GS=0 to 5V V DS=15V, ID=36A, V GS=0V nC V V(plateau) V DD=15V, ID=36A IS TC=25C - 0.96 32.9 33 73 292 A 1.28 V 41.2 ns 41 nC Page 3 2003-01-17 IPP10N03L IPB10N03L 1 Power dissipation Ptot = f (TC) IPP10N03L 2 Drain current ID = f (TC) parameter: V GS 10 V IPP10N03L 120 80 W A 100 90 60 P tot ID 20 40 60 80 100 120 140 160 C 190 80 70 60 50 50 40 30 40 30 20 10 10 0 0 0 0 20 40 60 80 100 120 140 160 C 190 20 TC TC 3 Safe operating area ID = f ( V DS ) parameter : D = 0 , TC = 25 C 10 3 IPP10N03L 4 Max. transient thermal impedance ZthJC = f (t p) parameter : D = t p/T 10 1 IPP10N03L K/W A tp = 1.8s 10 0 /I D V 10 2 ID = 10 s ZthJC DS R DS (on ) 10 -1 100 s D = 0.50 10 10 1 1 ms -2 0.20 0.10 single pulse 0.05 0.02 0.01 10 ms 10 -3 DC 10 0 -1 10 10 0 10 1 V 10 2 10 -4 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 VDS Page 4 tp 2003-01-17 IPP10N03L IPB10N03L 5 Typ. output characteristic ID = f (VDS); Tj=25C parameter: tp = 80 s 170 IPP10N03L Ptot = 107W 6 Typ. drain-source on resistance RDS(on) = f (ID) parameter: V GS IPP10N03L 0.032 b c d e VGS [V] a 3.0 b 3.5 4.0 4.5 5.0 5.5 6.0 10.0 A 140 hg f e c d e 120 RDS(on) 0.024 ID 0.02 100 80 f dg h 0.016 60 0.012 c f 40 b 0.008 VGS [V] = b 3.5 c 4.0 d 4.5 e f 5.0 5.5 g h 6.0 10.0 g h 20 a 0.004 0 0 0.5 1 1.5 2 2.5 3 3.5 4 V 5 0 0 20 40 60 80 100 A 140 VDS ID 7 Typ. transfer characteristics ID= f ( VGS ); VDS 2 x ID x RDS(on)max parameter: tp = 80 s 140 8 Typ. forward transconductance g fs = f(ID); Tj=25C parameter: gfs 80 A S 60 100 gfs 80 60 40 20 0 0 1 2 3 4 6 ID 50 40 30 20 10 V VGS 0 0 25 50 75 100 A ID 150 Page 5 2003-01-17 IPP10N03L IPB10N03L 9 Drain-source on-state resistance RDS(on) = f (Tj) parameter : ID = 36 A, VGS = 10 V IPP10N03L 10 Typ. gate threshold voltage VGS(th) = f (Tj) parameter: V GS = VDS 3 21 18 V V GS(th) RDS(on) 16 14 12 98% 10 8 6 4 2 0 -60 -20 20 60 100 140 C 2 0,9mA 1.5 typ 1 60A 0.5 200 0 -60 -20 20 60 100 C Tj 180 Tj 11 Typ. capacitances C = f (VDS) parameter: V GS=0V, f=1 MHz 10 4 12 Forward character. of reverse diode IF = f (VSD) parameter: Tj , tp = 80 s 10 3 IPP10N03L A pF 10 2 C 10 3 Coss 10 1 Tj = 25 C typ Tj = 175 C typ Tj = 25 C (98%) Tj = 175 C (98%) 10 0 0 Crss 10 2 0 IF Ciss 5 10 15 20 V 30 0.4 0.8 1.2 1.6 2 2.4 V 3 VDS Page 6 VSD 2003-01-17 IPP10N03L IPB10N03L 13 Typ. avalanche energy EAS = f (Tj) par.: ID = 30 A, VDD = 25 V, RGS = 25 26 15 Drain-source breakdown voltage V(BR)DSS = f (Tj ) parameter: ID=10 mA IPP10N03L 36 mJ V 22 V(BR)DSS 20 34 33 32 31 30 29 28 E AS 18 16 14 12 10 8 6 4 2 0 25 45 65 85 105 125 145 C 185 Tj 27 -60 -20 20 60 100 140 C 200 Tj 14 Typ. gate charge VGS = f (QGate ) parameter: ID = 36 A pulsed IPP10N03L 16 V 12 VGS 10 0.2 VDS max 8 0.5 VDS max 0.8 VDS max 6 4 2 0 0 10 20 30 40 nC 55 Q Gate Page 7 2003-01-17 IPP10N03L IPB10N03L Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 Munchen (c) Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Page 8 2003-01-17 |
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